optocoupler, phototransistor output, with base connection, high bv cer voltage www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83611 288 rev. 1.6, 10-dec-08 h11d1, h11d2, h11d3, h11d4 vishay semiconductors description the h11d1, h11d2, h11d3, h11d4 are optocouplers with very high bv cer . they are intended for telecommunications applications or any dc application requiring a high blocking voltage. the h11d1, h11d2 are identical and the h11d3, h11d4 are identical. features ?ctr at i f = 10 ma, bv cer = 10 v: 20 % ? good ctr linearly with forward current ? low ctr degradation ? very high collector emitter breakdown voltage - h11d1/h11d2, bv cer = 300 v - h11d3/h11d4, bv cer = 200 v ? isolation test voltage: 5300 v rms ? low coupling capacitance ? high common mode transient immunity ? package with base connection ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code h or j, double protection ? din en 60747-5-5 (vde 0884) available with option 1 ? bsi iec 60950; iec 60065 ?fimko applications ? telecommunications ? replace relays note for additional information on the availabl e options refer to option information. i179004 1 2 3 6 5 4 b c e a c n c order information part remarks h11d1 ctr > 20 %, dip-6 h11d2 ctr > 20 %, dip-6 h11d3 ctr > 20 %, dip-6 h11d4 ctr > 20 %, dip-6 h11d1-x007 ctr > 20 %, smd-6 (option 7) h11d1-x009 ctr > 20 %, smd-6 (option 9) h11d2-x007 ctr > 20 %, smd-6 (option 7) H11D3-X007 ctr > 20 %, smd-6 (option 7) absolute maximum ratings parameter test condition part symbol value unit input reverse voltage v r 6v dc forward current i f 60 ma surge forward current t 10 s i fsm 2.5 a power dissipation p diss 100 mw
document number: 83611 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 10-dec-08 289 h11d1, h11d2, h11d3, h11d4 optocoupler, phototransistor output, with base connection, high bv cer voltage vishay semiconductors note t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximu m ratings can cause permanent damage to the device. functional operation of the device is not implied at these or any other c onditions in excess of t hose given in the operational sections of this document. exposure to absolute ma ximum ratings for extended periods of the time can adversely affect reliability. output collector emitter voltage h11d1 v ce 300 v h11d2 v ce 300 v h11d3 v ce 200 v h11d4 v ce 200 v collector base voltage h11d1 v cbo 300 v h11d2 v cbo 300 v h11d3 v cbo 200 v h11d4 v cbo 200 v emitter base voltage v beo 7v collector current i c 100 ma power dissipation p diss 300 mw coupler isolation test voltage between emitter and detector v iso 5300 v rms insulation thickness between emitter and detector 0.4 mm creepage distance 7mm clearance distance 7mm comparative tracking index per din iec 112/vde 0303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature range t stg - 55 to + 150 c operating temperature range t amb - 55 to + 100 c junction temperature t j 100 c soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm t sld 260 c electrical characteristcs parameter test condition part symbol min. typ. max. unit input forward voltage i f = 10 ma v f 1.1 1.5 v reverse voltage i r = 10 a v r 6v reverse current v r = 6 v i r 0.01 10 a capacitance v r = 0 v, f = 1 mhz c o 25 pf thermal resistance r thja 750 k/w absolute maximum ratings parameter test condition part symbol value unit
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83611 290 rev. 1.6, 10-dec-08 h11d1, h11d2, h11d3, h11d4 vishay semiconductors optocoupler, phototransistor output, with base connection, high bv cer voltage note t amb = 25 c, unless otherwise specified. minimum and maximum values were tested requierements. typical val ues are characteristic s of the device and are the result of en gineering evaluations. typical values are for information only and are not part of the testing requirements. note switching times measurement-test circuit and waveforms output collector emitter breakdown voltage i ce = 1 ma, r be = 1 m h11d1 bv cer 300 v h11d2 bv cer 300 v h11d3 bv cer 200 v h11d4 bv cer 200 v emitter base breakdown voltage i eb = 100 a bv ebo 7v collector emitter capacitance v ce = 10 v, f = 1 mhz c ce 7pf collector base capacitance v cb = 10 v, f = 1 mhz c cb 8pf emitter base capacitance v eb = 5 v, f = 1 mhz c eb 38 pf thermal resistance r th 250 k/w coupler coupling capacitance c c 0.6 pf current transfer ratio i f = 10 ma, v ce = 10 v, r be = 1 m i c /i f 20 % collector emitter, saturation voltage i f = 10 ma, i c = 0.5 ma, r be = 1 m v cesat 0.25 0.4 v collector emitter, leakage current v ce = 200 v, r be = 1 m h11d1 i cer 100 na h11d2 i cer 100 na v ce = 300 v, r be = 1 m , t amb = 100 c h11d1 i cer 250 a h11d2 i cer 250 a current transfer ratio parameter test condition part symbol min. typ. max. unit current transfer ratio i f = 10 ma, v ce = 10 v, r be = 1 m ctr 20 % switching characteristics parameter test condition symbol min. typ. max. unit turn-on time i c = 2 ma (to be adjusted by varying i f ), r l = 100 , v cc = 10 v t on 5s rise time i c = 2 ma (to be adjusted by varying i f ), r l = 100 , v cc = 10 v t r 2.5 s turn-off time i c = 2 ma (to be adjusted by varying i f ), r l = 100 , v cc = 10 v t off 6s fall time i c = 2 ma (to be adjusted by varying i f ), r l = 100 , v cc = 10 v t f 5.5 s electrical characteristcs parameter test condition part symbol min. typ. max. unit
document number: 83611 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 10-dec-08 291 h11d1, h11d2, h11d3, h11d4 optocoupler, phototransistor output, with base connection, high bv cer voltage vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - current transfer ratio (typ.) fig. 2 - diode forward voltage (typ.) fig. 3 - output characteristics fig. 4 - output characteristics fig. 5 - transistor capacitances (typ.) fig. 6 - collector emitter leakage current (typ.) 0 0.2 0.4 0.6 0. 8 1.0 1.2 10 -4 10 -3 10 -2 10 -1 n tcr i f (a) ih11d1_02 v ce = 10 v , normalized to i f = 10 ma, n ctr = f (i f ) 1.2 1.1 1.0 0.9 10 -1 10 1 10 2 10 0 v f ( v ) i f (ma) ih11d1_03 v f = f (i f , t a ) 25 c 50 c 75 c 20 17.5 15 12.5 10 7.5 5 2.5 0 10 -2 10 1 10 2 10 -1 10 0 i ce (ma) v ce ( v ) ih11d1_04 i ce = f ( v ce , i b ) i b = 100 a i b = 8 0 a i b = 60 a i b = 40 a i b = 20 a 30 25 20 15 10 5 0 10 -2 10 1 10 2 10 -1 10 0 i ce (ma) v ce ( v ) ih11d1_05 i ce = f ( v ce , i f ) i f = 100 a i f = 8 0 a i f = 60 a i f = 40 a i f = 20 a 100 90 8 0 70 60 50 40 30 20 10 0 10 -2 10 1 10 2 10 -1 10 0 c xx (pf) v xx ( v ) ih11d1_06 f = 1 mhz, c ce = f ( v ce ) c cb = f ( v cb ), c eb = f ( v eb ) c cb c ce c eb 10 -6 10 -7 10 - 8 10 -9 10 -10 10 -11 10 -12 0 25 50 75 100 125 150 175 200 c cer (a) v ce ( v ) ih11d1_07 i cer = f ( v ce ) i f = 0, r be = 1 m
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83611 292 rev. 1.6, 10-dec-08 h11d1, h11d2, h11d3, h11d4 vishay semiconductors optocoupler, phototransistor output, with base connection, high bv cer voltage fig. 7 - permissible loss diode fig. 8 - permissible power dissipation fig. 9 - switching times measur ement-test circuit and waveform package dimensions in inches (millimeters) 100 90 8 0 70 60 50 40 30 20 10 0 030 20 10 40 50 60 70 8 0 90 100 i f (ma) t a (c) ih11d1_0 8 i f = f (t a ) 400 350 300 250 200 150 100 50 0 030 20 10 40 50 60 70 8 0 90 100 p tot (m w ) t a (c) ih11d1_09 transistor diode p tot = f (t a ) ih11d1_01 t off t r 10 % 50 % 90 % t s t pdoff t pdon t on t r t d o u tp u t inp u t 10 % 50 % 90 % 0 0 i f r l i c v o v cc g n d 47 i17 8 004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3. 8 1) 0.031 (0. 8 0) min. 0.300 (7.62) typ. 0.031 (0. 8 0) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.01 8 (0.45) 0.022 (0.55) 0.04 8 0.022 (0.55) 0.24 8 (6.30) 0.256 (6.50) 0.335 ( 8 .50) 0.343 ( 8 .70) pin one id 6 5 4 1 2 3 1 8 3 to 9 0.300 to 0.347 (7.62 to 8 . 8 1) 4 typ. iso method a (0.45)
document number: 83611 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 10-dec-08 293 h11d1, h11d2, h11d3, h11d4 optocoupler, phototransistor output, with base connection, high bv cer voltage vishay semiconductors 0.315 ( 8 .0) min. 0.300 (7.62) typ. 0.1 8 0 (4.6) 0.160 (4.1) 0.331 ( 8 .4) min. 0.406 (10.3) max. 0.02 8 (0.7) option 7 1 8 494 min. 0.315 ( 8 .00) 0.020 (0.51) 0.040 (1.02) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03) 0.012 (0.30) typ. 0.0040 (0.102) 0.009 8 (0.249) 15 max. option 9
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83611 294 rev. 1.6, 10-dec-08 h11d1, h11d2, h11d3, h11d4 vishay semiconductors optocoupler, phototransistor output, with base connection, high bv cer voltage ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national an d international stat utory requirements. 2. regularly and continuously improve the performance of ou r products, processes, distri bution and operating systems with respect to their impact on the health and safety of our employ ees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosp here which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london am endments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international in itiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of c ontinuous improvements to eliminat e the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applicat ions. all operating parameters must be validat ed for each customer application by the customer. should the buyer use vishay semi conductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damag es, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associat ed with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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